Bandgap Tuning of InSb by Chemical Doping
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摘要: 利用布里奇曼法进行了InAsSb半导体合金的生长，并对其结构、光学及电学特性进行了表征.研究发现，As替位掺杂造成X射线（111）衍射峰略微右移，同时其半高宽明显展宽.基于X射线衍射数据，利用Vegard定律计算出的As组分与能谱测量得到的结果基本吻合.此外，As的掺入使得材料背景载流子浓度略有上升.傅里叶变换红外光谱结果显示，As的替入使得材料带隙明显变小，拟合得到的光学带隙与通过Woolley-Warner经验公式得到的值定性一致.研究结果表明，As掺杂是减小InSb带隙，开拓其面向第二个大气窗口红外探测应用的有效途径.Abstract: The growth of InAsSb crystal by using the Bridgeman method is reported, and the structural, optical and electric characterizations of the crystal are depicted. It is found that the (111) X-ray diffraction peak exhibits a shift towards the higher-angle side, accompanied by a notable broadening of the peak width. According to the Vegard law, the As doping concentration of the sample can be calculated, which agrees well with the result obtained by energy-dispersive X-ray spectroscopy. Moreover, the substitution of Sb by As results in an observable increase of the background carrier concentration of the material system. The As doping can also severely influence the optical properties of InSb, leading to a distinct reduction of the bandgap as revealed by the measurements of Fourier transform infrared transmission spectra. The bandgap derived by fitting the (αd)2-hν plot is in agreement with the value obtained by the Woolley-Warner relationship. Our results show that As doping is a feasible way for the realization of long-wavelength infrared InSb-based detectors.
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Key words:
- Infrared detector /
- Bandgap /
- Bridgeman method /
- Doping /
- Microgravity
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