K6R4016V1D芯片在低地球轨道发生单粒子效应频次的分析

韩建伟; 封国强; 余永涛; 马英起; 上官士鹏; 陈睿; 朱翔

doi:10.11728/cjss2015.01.064

K6R4016V1D芯片在低地球轨道发生单粒子效应频次的分析

doi: 10.11728/cjss2015.01.064

中国科学院空间科学与应用研究中心北京 100190

基金项目: 国家自然科学基金项目资助(41304148)

详细信息

中图分类号: P353
计量
- 文章访问数: 1178
- HTML全文浏览量: 72
- PDF下载量: 1176
- 被引次数: 0
出版历程
- 收稿日期: 2013-11-25
- 修回日期: 2014-06-21
- 刊出日期: 2015-01-15

Analysis of single-event effects rate of K6R4016V1D chips applied in low Earth orbit

Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190

摘要

摘要: 俄罗斯福布斯-土壤火星探测器于2011年11月9日携带中国首个火星探测器萤火一号进入低地球轨道(LEO),但原定于159min后探测器在轨发动机点火变轨未能实施,最终探测计划失败.俄罗斯航天局研究分析认为,事故最可能是由于宇宙线重离子轰击星载计算机存储器件,导致两台计算机重启所致.但是抗辐射专家对空间辐射粒子会在如此短时间内通过单粒子效应(SEE)导致LEO探测器失效的观点并不认同.本文根据俄罗斯航天局发布的受影响器件信息,通过实验和计算,分析了K6R4016V1D芯片在低地球轨道运行时可能遇到的空间辐射粒子诱发单粒子效应的频次,探讨了单粒子效应导致福布斯-土壤火星探测器失效的可能性.
- 福布斯-土壤 /
- 火星探测器 /
- K6R4016V1D芯片 /
- 单粒子效应
Abstract: Russia's Mars probe Phobos-Grunt together with China's first Mars probe Yinghuo-1 were launched into Low Earth Orbit (LEO) on November 9, 2011. Unfortunately, the main probe failed to fire its thrusters and transfer its orbit as planned after 159 minutes, eventually the trip to Mars was terminated. The most likely cause of the accident investigated by Russian Space Agency (RSA) was that RAM chips in onboard control computers worked wrong when hit by cosmic heavy charged particles, which sequently led to the two computers restart and eventually disturbed the probe totally. However experts on satellite radiation hardness casted lot of doubt on the statement that LEO probe can be effected by Single-Event Effects (SEE) resulting from space radiation particles in so short period of time. Based on information of the victim RAM components disclosed by RSA, experiment tests and calculations were performed for K6R4016V1D chip to predict SEE rate when applied in LEO. Finally, possibility for SEE to cause the failure of Phobos-Grunt probe was discussed.
- Phobos-Grunt /
- Mars probe /
- K6R4016V1D chip /
- Single-event effects

HTML全文

参考文献(11)

[1]	Page T E Jr, Benedetto J M. Extreme Latchup Susceptibility in Modern Commercial-off-the-Shelf (COTS) Monolithic 1M and 4M CMOS Static Random-Access Memory (SRAM) Devices[C]. IEEE Radiation Effects Data Workshop, 2005:1-7, doi: 10.1109/REDW.2005.1532657
[2]	Han Jianwei, Zhang Zhenlong, Feng Guoqiang, et al. The radiation test of SRAM devices for extreme single event latch-up susceptibility and a warning to our aerospace safety[J]. Spacecr. Env. Eng., 2008, 25(3):265-267. In Chinese (韩建伟, 张振龙, 封国强, 等.单粒子锁定极端敏感器件的试验及对我国航天安全的警示[J].航天器环境工程, 2008, 25(3):265-267)
[3]	Han Jianwei, Feng Guoqiang, Cai Minghui, et al. Applications of pulsed laser test on single event effect hardening for aerospace components and circuit systems[J]. Spacecr. Env. Eng., 2011, 28(2):121-125. In Chinese (韩建伟, 封国强, 蔡明辉, 等. 脉冲激光试验在宇航器件和电路系统抗单粒子效应设计中的初步应用[J]. 航天器环境工程, 2011, 28(2):121-125)
[4]	Huang Jianguo, Han Jianwei. Calculation of equivalent LET for pulsed laser simulating SEE[J]. Sci. China: G, 2004, 34(6):601-609. In Chinese (黄建国, 韩建伟. 脉冲激光模拟单粒子效应的等效LET计算[J]. 中国科学:G, 2004, 34(6): 601-609)
[5]	Yu Yongtao, Feng Guoqiang, Chen Rui, Shangguan Shipeng, Han Jianwei. Experimental study on single event latchup of SRAM K6R4016V1D and its protection[J]. Atom. Energ. Sci. Tech., 2012, 46(Supp.):587-591. In Chinese (余永涛, 封国强, 陈睿, 上官士鹏, 韩建伟. SRAMK6R4016V1D单粒子闩锁及防护试验研究[J]. 原子能科学技术, 2012, 46(增刊):587-591)
[6]	Jiang Yuguang, Feng Guoqiang, Zhu Xiang, Shangguan Shipeng, Ma Yingqi, Han Jianwei. Pulsed laser method for SEE testing in FPGA[J]. Atom. Energ. Sci. Tech., 2012, 46(Supp.):582-586. In Chinese (姜昱光, 封国强, 朱翔, 上官士鹏, 马英起, 韩建伟. FPGA单粒子效应的脉冲激光试验方法研究[J]. 原子能科学技术, 2012, 46(增):582-586)
[7]	McNulty P J, Farrell G E, Tucker W P. Proton induced nuclear reaction in silicon[J]. IEEE Trans. Nucl. Sci., 1981, 28(6):4007-4011
[8]	Han Jianwei, Ye Zonghai. Prediction of proton induced single event upset[J]. Chin. J. Space Sci., 1999, 19(3):266-271. In Chinese (韩建伟, 叶宗海. 质子引发的单粒子翻转率估算的研究[J]. 空间科学学报, 1999, 19(3):266-271)
[9]	Zhang Zhenli, Zhang Zhenlong, Han Jianwei, et al. Prediction of single event upset rate induced by near space atmospheric neutron in electronic device[J]. Chin. J. Space Sci., 2011, 31(3):350-354. In Chinese (张振力, 张振龙, 韩建伟, 等. 临近空间大气中子诱发电子器件单粒子翻转模拟研究[J]. 空间科学学报, 2011, 31(3):350-354)
[10]	Connell L W. Modeling the heavy ion upset cross section[J]. IEEE Trans. Nucl. Sci., 1995, 42(2):73-82
[11]	Bezerra F, Lorfevre E, Ecoffet R, Falguere D, Bourdoux P. CARMEN/MEX test board for the study of radiation effects on electronic components aboard JASON-2 and SAC-D satellites[R].//9th European Conference on Radiation and its Effects on Components and Systems (RADECS), Deauville:IEEE 2007