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脉冲激光诱发130nm体硅CMOS器件的单粒子闩锁效应

李赛 陈睿 韩建伟 上官士鹏 马英起

李赛, 陈睿, 韩建伟, 上官士鹏, 马英起. 脉冲激光诱发130nm体硅CMOS器件的单粒子闩锁效应[J]. 空间科学学报, 2021, 41(4): 648-653. doi: 10.11728/cjss2021.04.648
引用本文: 李赛, 陈睿, 韩建伟, 上官士鹏, 马英起. 脉冲激光诱发130nm体硅CMOS器件的单粒子闩锁效应[J]. 空间科学学报, 2021, 41(4): 648-653. doi: 10.11728/cjss2021.04.648
LI Sai, CHEN Rui, HAN Jianwei, SHANGGUAN Shipeng, MA Yingqi. Single Event Latch-up Effect of 130 nm Bulk Silicon CMOS Device Irradiated by Pulsed Laser[J]. Journal of Space Science, 2021, 41(4): 648-653. doi: 10.11728/cjss2021.04.648
Citation: LI Sai, CHEN Rui, HAN Jianwei, SHANGGUAN Shipeng, MA Yingqi. Single Event Latch-up Effect of 130 nm Bulk Silicon CMOS Device Irradiated by Pulsed Laser[J]. Journal of Space Science, 2021, 41(4): 648-653. doi: 10.11728/cjss2021.04.648

脉冲激光诱发130nm体硅CMOS器件的单粒子闩锁效应

doi: 10.11728/cjss2021.04.648
基金项目: 

国家自然科学青年基金项目资助(Y85032A020)

详细信息
    作者简介:

    李赛,E-mail:hebtulisai@163.com

  • 中图分类号: V216

Single Event Latch-up Effect of 130 nm Bulk Silicon CMOS Device Irradiated by Pulsed Laser

  • 摘要: 基于130nm体硅CMOS工艺,设计了具有不同阱/衬底接触与MOS管有源区间距、NMOS有源区与PMOS有源区间距的反相器链,利用脉冲激光试验开展了不同设计和不同工作电压下CMOS电路的单粒子闩锁效应敏感性研究.结果表明,随着阱/衬底接触与MOS管有源区的间距减小,以及NMOS与PMOS有源区间距的增大,电路抗SEL效应能力增强.此外,不同工作电压下电路的SEL效应规律表明,电压越大,反相器电路的SEL电流越大,且随着阱/衬底接触与MOS管有源区间距的减小以及NMOS与PMOS有源区间距的增大,电路出现SEL效应的开启电压增大.结合CMOS中寄生结构和单粒子闩锁效应触发机制,分析了相关因素影响电路单粒子闩锁效应敏感性的内在机制.

     

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  • 被引次数: 0
出版历程
  • 收稿日期:  2020-01-18
  • 修回日期:  2020-10-26
  • 刊出日期:  2021-07-15

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