基于ASIC芯片的多探测单元设计与验证
doi: 10.11728/cjss2024.01.2023-0018 cstr: 32142.14.cjss2024.01.2023-0018
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张鑫：男, 1977年3月出生于河北省邢台市, 现为中国科学院国家空间科学中心特聘研究员, 空间环境探测总体技术室主任, 主要研究方向为空间天气探测技术研究以及神经网络在空间探测技术中的应用研究等. E-mail: xinzhang@nssc.ac.cn
作者简介:
Design and Verification of Multi-detection Unit Based on ASIC Chip
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摘要: 以空间辐射环境中的粒子为研究目标, 研制了用硅微条传感器作为探头、用集成芯片IDE3160进行信号处理的空间粒子探测系统. 该系统采用两片硅微条传感器组成的硅微条探测阵列作为前端探头, 并应用数字化的信号处理方法, 获取空间粒子入射的位置及在硅微条内单位长度沉积的能量(线性能量传递, LET). 从诱发单粒子效应的物理机制角度, 对比重离子和脉冲激光在硅半导体中所产生物理效应的不同. 采用1.064 μm脉冲激光开展系统测试, 获得良好的LET线性结果: 该系统数据采集所需时间为2.47 ms, 可探测到的LET阈值约为0.1 MeV·cm2·mg–1, 皮尔逊相关系数(PCC)达0.998, 表明系统测量结果与理论设计符合性良好. 该系统动态范围宽、线性度好, 具有较高的集成度、可拓展性及可移植性, 可以搭载在各种空间探测卫星上.Abstract: Taking particles in space radiation environment as the research background, the space particle detection system using silicon micro-strip sensor as the probe and integrated chip IDE3160 for signal processing is developed. The system is designed by using silicon micro-strip detection array, which is composed of two silicon micro-strip sensors as the front-end probe, and using digital signal processing method to obtain the position of space particle incident and the energy deposited in the unit length (Linear Energy Transfer, LET) in the silicon micro-strip. From the perspective of the physical mechanism inducing single particle effects, the physical effects produced by contrasting heavy ions and pulsed lasers in silicon semiconductors are different. Pulsed laser of 1.064 μm was used to test the system, and good LET linearity results were obtained: The time required for data acquisition is 2.47 ms, the detectable LET threshold is about 0.1 MeV·cm2·mg–1 and the Pearson correlation coefficient is about 0.998, indicating that the system measurement is in good agreement with the theoretical design. The system has a wide dynamic range, good linearity, high integration, scalability and portability, and can be mounted on a variety of space exploration satellites.
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图 3 硅微条探测阵列定位原理
Figure 3. Positioning schematic diagram of silicon strip detection array
表 1 IDE3160主要参数
Table 1. Parameters of the IDE3160
参数 典型值 通道数 32 动态范围/pC –5 ～ +13 等效噪声电荷/pF–1 3516+7.6 差分输出增益/(μA·Fc–1) 0.14 功耗/mW 203 
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表 2 硅半导体和激光脉冲的参量
Table 2. Parameters for calculating the equivalent LET value of the laser pulse
λ/μm η α/cm–1 Eion/eV $\rho /(\mathrm{m}\mathrm{g}\cdot {\mathrm{c}\mathrm{m} }^{-3})$ 1.064 0.2675 10 3.6 2330
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